1 rf power mosfet transistor 5w, 100-500 mhz, 28v released; rohs compliant 20 jan 11 uf2805b ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macomtech.com for additi onal data sheets and prod uct information. m/a-com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. package outline features ?? n-channel enhancement mode device ?? dmos structure ?? lower capacitances for broadband operation ?? common source configuration ?? lower noise floor ?? 100 mhz to 500 mhz operation absolute maximum ratings at 25 c parameter rating drain-source voltage 65 gate-source voltage 20 drain-source current 1.4 power dissipation 14.4 junction temperature 200 storage temperature -55 to +150 thermal resistance 12.1 symbol v ds v gs i ds p d t j t stg jc units v v a w c c c/w electrical characteristics at 25c parameter symbol min max units test conditions drain-source breakdown voltage bv dss 65 - v v gs = 0.0 v , i ds = 2.0 ma drain-source leakage current i dss - 1.0 ma v gs = 28.0 v , v gs = 0.0 v gate-source leakage current i gss - 1.0 a v gs = 20.0 v , v ds = 0.0 v gate threshold voltage v gs(th) 2.0 6.0 v v ds = 10.0 v , i ds = 10.0 ma forward transconductance g m 80 - s v ds = 10.0 v , i ds 1.0 ma , ? v gs = 1.0v, 80 s pulse input capacitance c iss - 7.0 pf v ds = 28.0 v , f = 1.0 mhz output capacitance c oss - 5 pf v ds = 28.0 v , f = 1.0 mhz reverse capacitance c rss - 2.4 pf v ds = 28.0 v , f = 1.0 mhz power gain g p 10 - db v dd = 28.0 v, i dq = 50 ma, p out = 5.0 w f =500 mhz drain efficiency ? d 50 - % v dd = 28.0 v, i dq = 50 ma, p out = 5.0 w f =500 mhz load mismatch tolerance vswr-t - 20:1 - v dd = 28.0 v, i dq = 50 ma, p out = 5.0 w f =500mhz f (mhz) z in ( ? ) z load ( ? ) 100 15.0-j80.0 35.0+j55.0 300 8.0-j43.0 29.0+j40.0 500 4.0-j29.0 28.0+j29.0 v dd =28v, i dq =50 ma, p out =100.0 w typical device impedances z in is the series equivalent in put impedance of the device from gate to source. z load is the optimum series equivalent load impedance as measured from drain to ground
2 rf power mosfet transistor 5w, 100-500 mhz, 28v released; rohs compliant 20 jan 11 uf2805b ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macomtech.com for additi onal data sheets and prod uct information. m/a-com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. v ds (v) typical broadband performance curves capactances (pf) capacitances vs voltage f=1.0mhz v ds (v) power output vs voltage p in =0.4 w i dq =5.0 ma p out =500 w gain vs frequency v dd =28 v p out =5.0 w i dq =50 ma 7 6 5 4 3 2 1 0 popwer output (w) 8 7 6 5 4 3 2 1 0 15 gain (db) 200 400 frequency (mhz) 5 15 25 30 20 10 0 10 25 300 500 10 5 100 20 efficiency vs frequency v dd =28v i dq =50 ma p out =5.0 w efficiency (w) 200 400 frequency (mhz) 60 55 50 45 300 100 30 c iss c oss c rss 20 30 35 500 power output vs power input v dd =28 v i dq =50 ma power output (w) 0.1 power input (w) 300mhz 100mhz 7 6 5 4 3 2 1 0 0.05 0.25 2 0.15 0.025 0.3 500mhz 0.2
3 rf power mosfet transistor 5w, 100-500 mhz, 28v released; rohs compliant 20 jan 11 uf2805b ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macomtech.com for additi onal data sheets and prod uct information. m/a-com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. test fixture assembly test fixture schematic
|
